? semiconductor components industries, llc, 2003 march, 2003 - rev. 2 1 publication order number: bc447/d bc447, bc449, bc449a high voltage transistors npn silicon maximum ratings rating symbol value unit collector-emitter voltage bc447 bc449, bc449a v ceo 80 100 vdc collector-base voltage bc447 bc449, bc449a v cbo 80 100 vdc emitter-base voltage v ebo 5.0 vdc collector current - continuous i c 300 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg -55 to +150 c moisture sensitivity level (msl) electrostatic discharge (esd) msl: 1 na thermal characteristics characteristic symbol max unit thermal resistance, junction-to-ambient r q ja 200 c/w thermal resistance, junction-to-case r q jc 83.3 c/w device package shipping ordering information bc447 to-92 http://onsemi.com case 29 to-92 style 17 5000 units/box 3 2 1 bc449 to-92 5000 units/box collector 1 2 base 3 emitter bc449a to-92 5000 units/box marking diagram bc 44xx yww bc44xx = specific device code xx = 7, 9 or 9a y = year ww = work week
bc447, bc449, bc449a http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector - emitter breakdown voltage (note 1) (i c = 1.0 madc, i b = 0) bc447 bc449, bc449a v (br)ceo 80 100 - - - - vdc collector - base breakdown voltage (i c = 100 m adc, i e = 0) bc447 bc449, bc449a v (br)cbo 80 100 - - - - vdc emitter - base breakdown voltage (i e = 10 m adc, i c = 0) v (br)ebo 5.0 - - vdc collector cutoff current (v cb = 60 vdc, i e = 0) bc447 (v cb = 80 vdc, i e = 0) bc449, bc449a i cbo - - - - 100 100 nadc on characteristics (note 1) dc current gain (i c = 2.0 madc, v ce = 5.0 vdc) bc447, bc449 bc449a (i c = 10 madc, v ce = 5.0 vdc) bc447, bc449 bc449a (i c = 100 madc, v ce = 5.0 vdc) bc447, bc449 bc449a h fe 50 120 50 100 50 60 - - - - - - 460 220 - - - - - collector - emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) - 0.125 0.25 vdc base - emitter saturation voltage (i c = 100 madc, i b = 10 madc) v be(sat) - 0.85 - vdc base - emitter on voltage (i c = 2.0 madc, v ce = 5.0 vdc) (i c = 100 madc, v ce = 5.0 vdc) (note 1) v be(on) 0.55 - - 0.76 0.7 1.2 vdc dynamic characteristics current - gain - bandwidth product (i c = 50 madc, v ce = 5.0 vdc, f = 100 mhz) f t 100 200 - mhz 1. pulse test: pulse width 300 s, duty cycle 2%
bc447, bc449, bc449a http://onsemi.com 3 figure 1. current-gain e bandwidth product figure 2. capacitance figure 3. switching times i c , collector current (ma) -100 -10 200 100 70 50 30 v r , reverse voltage (volts) -1.0 -100 -0.1 -2.0 f t , current-gain - bandwidth product (mhz) c, capacitance (pf) -2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70 300 -0.2 -0.5 -5.0 -10 -20 -50 t j = 25 c i c , collector current (ma) -10 500 200 100 50 20 10 -100 t, time (ns) -50 -200 1.0 k 300 700 70 30 -70 -20 -30 t j = 25 c v ce = -1.0 v -5.0 v -1.0 40 20 10 6.0 t j = 25 c 4.0 2.0 c ibo c obo v cc = -40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r t d @ v be(off) = -0.5 v 8.0 figure 4. active-region safe operating area v ce , collector-emitter voltage (volts) -10 -50 -1.0 -500 -200 -100 -50 -20 -10 -20 -2.0 -5.0 -1.0 k i c , collector current (ma) mps8598 current limit thermal limit second breakdown limit mps8599 -3.0 -7.0 -30 -100 -70 -30 -70 -300 -700 duty cycle 10% figure 5. dc current gain figure 6. ono voltages v, voltage (volts) i c , collector current (ma) , dc current gain h fe i c , collector current (ma) -2.0 -0.2 300 200 100 70 50 30 -10 t j = 125 c -1.0 -5.0 v ce = -5.0 v -20 -100 -50 -200 25 c -55 c -0.5 10 200 1.0 1.0 0.8 0.6 0.4 0.2 0 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v 0.2 2.0 20 50 0.5 5.0
bc447, bc449, bc449a http://onsemi.com 4 figure 7. collector saturation region figure 8. base-emitter temperature coefficient i c , collector current (ma) i b , base current (ma) r vb , temperature coefficient (mv/ c) , collector-emitter voltage (volts) v ce 100 0.2 10 1.0 2.0 5.0 20 50 200 0.1 10 0.05 2.0 1.6 1.2 0.8 0.4 0 1.0 t j = 25 c i c = 100 ma i c = 50 ma i c = 200 ma i c = 20 ma i c = 10 ma 20 2.0 5.0 0.2 0.5 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 r vb for v be -55 c to 125 c 0.5 0.02 figure 9. thermal response t, time (ms) 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k 0.03 0.02 0.1 0.07 0.05 0.01 0.3 0.2 1.0 0.7 0.5 r(t), normalized transient thermal resistance z q jc (t) = r(t) ? r q jc t j(pk) - t c = p (pk) z q jc (t) z q ja (t) = r(t) ? r q ja t j(pk) - t a = p (pk) z q ja (t) d curves apply for power pulse train shown read time at t 1 (see an469) t 1 t 2 duty cycle, d = t 1 /t 2 p (pk) d = 0.5 0.2 0.1 0.02 0.01 single pulse single pulse 0.05
bc447, bc449, bc449a http://onsemi.com 5 package dimensions to-92 (to-226) case 29-11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x-x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 17: pin 1. collector 2. base 3. emitter
bc447, bc449, bc449a http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2-9-1 kamimeguro, meguro-ku, tokyo, japan 153-0051 phone : 81-3-5773-3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bc447/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax : 303-675-2176 or 800-344-3867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 800-282-9855 toll free usa/canada
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